Methods and apparatus for substrate processing

ABSTRACT

A method for processing a substrate in a plasma processing chamber is provided. The substrate is disposed above a chuck and surrounded by an edge ring. The edge ring is electrically isolated from the chuck. The method includes providing first RF power to the chuck. The method also includes providing an edge ring RF voltage control arrangement. The edge ring RF voltage control arrangement is coupled to the edge ring to provide second RF power to the edge ring resulting in the edge ring having an edge ring potential. The method further includes generating a plasma within the plasma processing chamber to process the substrate. The substrate is being processed while the edge ring RF voltage control arrangement is configured to cause the edge ring potential to be substantially equal to a DC potential of the substrate while processing the substrate.

BACKGROUND OF THE INVENTION

Advances in plasma processing have ilfacilitated growth in thesemiconductor industry. Since the semiconductor industry is highlycompetitive, device manufacturers generally want to maximize yield andefficiently utilize the real estate available on a substrate. Duringplasma processing of the substrate, a plurality of parameters may needto be controlled to ensure high yield of devices being processed. Acommon cause of defective devices is the lack of uniformity duringsubstrate processing. Factors that may affect uniformity are substrateedge effects. Another cause of defective devices may be due to polymericby-products flaking off from the backside of one substrate onto anothersubstrate during transport.

Due to the demand for higher performance devices, the pressure tofurther reduce substrate feature sizes, as well as the implementation ofnewer optimized substrate materials, has challenged current fabricationtechnologies. For example, it is becoming increasing difficult tomaintain the uniformity or process results from the center to the edgeof larger substrates (e.g., >300 mm). In general, for a given featuresize, the number of devices on the substrate near the edge increases asthe size of the substrate becomes larger. Likewise, for a givensubstrate size, the number of devices on the substrate near the edgeincreases as the feature size of the devices decreases. For example,often over 20% the total number of devices on a substrate are locatednear the perimeter the substrate.

Due to edge effects, such as electric field, plasma temperature, and theloading effects from process chemistry, the process results near thesubstrate edge may differ from the remaining (center) area of thesubstrate. For example, the equipotential lines of the plasma sheath maybecome disrupted, causing non-uniform ion angular distribution aroundthe substrate edge. Generally, it is desirable for the electric field toremain substantially constant over the entire surface of the substratein order to maintain process uniformity and vertical etch profiles.

In addition, during the etch process, it may be common for polymerbyproducts (e.g., fluorinated polymers, etc.) to form on the substratebackside and/or around the substrate edge. Fluorinated polymersgenerally are comprised of photo resist material previously exposed toan etch chemistry, or polymer byproducts deposited during a fluorocarbonetch process. In general, a fluorinated polymer is a substance with achemical equation of C_(x)H_(y)F_(z), where x, z are integers greaterthan 0, and y is an integer greater than or equal to 0 (e.g., CF₄, C₂F₆,CH₂F₂, C₄F₈, C₅F₈, etc.).

However, as successive polymer layers are deposited on the edge area asthe result of several different etch processes, organic bonds that arenormally strong and adhesive will eventually weaken and peel or flakeoff, often onto another substrate during transport. For example,substrates are commonly moved in sets between plasma processing systemsvia substantially clean containers, often called cassettes. As a higherpositioned substrate is repositioned in the container, a portion of apolymer layer may fall on a lower substrate where dies are present,potentially affecting device yield.

FIG. 1 shows a simplified diagram of a substrate in which a set of edgepolymers have been deposited on the planar backside is shown. Aspreviously stated, during the etch process, it may be common for polymerby-products (edge polymers) to form on the substrate. In this example,the polymer by-products have been deposited on the planar backside, thatis, the side of the substrate away from the plasma. For example, thepolymer thickness may be about 250 nm at about 70° (102), 270 nm atabout 45° (104), and about 120 nm at 0° (106). In general, the greaterthe thickness of the polymer, the higher the probability that a portionof the polymer may become dislodged and fall onto another substrate orthe chuck, potentially affecting manufacturing yield.

FIG. 2 shows a simplified diagram of a capacitively-coupled plasmaprocessing system in which the DC potential of the edge ring issubstantially greater than that of the substrate. In general, a sourceRF generated by source RF generator 210 is commonly used to generate theplasma as well as control the plasma density via capacitively coupling.Certain etch applications may require the upper electrode to be groundedwith respect to a lower electrode, which is RF powered. The RF power isat least one of 2 MHz, 27 MHz, and 60 MHz. Still other etch applicationsmay require both the upper electrode and the lower electrode to be RFpowered using similar RF frequencies.

Generally, an appropriate set of gases is flowed through an inlet in anupper electrode 202. The gases are subsequently ionized to form plasma204 in order to process (e.g., etch or deposit) exposed areas ofsubstrate 206, such as a semiconductor substrate or a glass pane,positioned with a hot edge ring (HER) 212 (e.g., Si, etc.) on anelectrostatic chuck (ESC) 208, which also serves as a powered electrode.

Hot edge ring 212 generally performs many functions, includingpositioning substrate 206 on ESC 208 and shielding the underlyingcomponents not protected by the substrate itself from being damaged bythe ions of the plasma. Hot edge ring 212 may further sit on couplingring 220 (e.g., quartz, etc.), which is generally configured to providea current path from chuck 208 to hot edge ring 212. In general, aconfigurable DC power source 216 may be coupled to hot edge ring 212through RF filter 214.

RF filter 214 is generally used to provide attenuation of unwanted RFpower without introducing losses to DC power source 216. RF filter 214includes a switch module that allows a positive or negative currentpolarity to be selected, as well as a path to ground. The RF filter 214includes vacuum relays. RF harmonics are generated in the plasmadischarge and may be kept from being returned to the DC power source bythe RF filter.

In the case where DC power source 216 is a positive voltage, the DCpotential of the edge ring is substantially higher than that of thesubstrate in a typical plasma process. Thus, the angular iondistribution profile is substantially non-uniform, with a set of vectorsthat tend to point toward areas of lower potential, such as thesubstrate edge. This application is highly useful for polymer removalfrom the substrate edge, as mentioned earlier.

In another case where DC power source 216 is a positive voltage, the DCpotential of the edge ring may be substantially similar to that of thesubstrate (e.g., V_(substrate)−V_(edge ring)≈0). The DC potential on thesubstrate during processing tends to be negative with respect to ground,and thus when the edge ring is coupled to receive a negative potential(with respect to ground), the DC potential of the edge ring and the DCpotential of the substrate are substantially equal. Consequently,angular ion distribution is substantially uniform, with a set of vectorsthat are substantially perpendicular to the substrate in an area of theplasma sheath above both the substrate and the edge ring. As previouslystated, this perpendicular angular profile may be useful for anisotropicetch applications, such as etching contacts and trenches with highaspect ratios.

It is also possible to, for example, couple the ground terminal of theDC power source, in which case the edge ring may have a higher potential(being at ground) than the DC potential of the substrate (beinggenerally negative during processing, in an embodiment). In this case,the angular ion distribution will also tend toward the substrate edge,albeit to a lesser degree than when the edge ring is coupled to receivevoltage from the positive terminal of the DC power source.

However, aforementioned prior art methods employing DC control on hotedge ring may require substantial DC power to sustain the requiredvoltages, adding cost to the fabrication of devices. In addition, arcingbetween the wafer edge and hot edge ring may cause pitting on substrateedge and damage to the devices, thereby reducing yield.

SUMMARY OF INVENTION

The invention relates, in an embodiment, to a method for processing asubstrate in a plasma processing chamber. The substrate is disposedabove a chuck and surrounded by an edge ring. The edge ring iselectrically isolated from the chuck. The method includes providingfirst RF power to the chuck. The method also includes providing an edgering RF voltage control arrangement. The edge ring RF voltage controlarrangement is coupled to the edge ring to provide second RF power tothe edge ring. The second RF power being delivered to the edge ring hasa frequency of about 20 KHz to about 10 MHz, resulting in the edge ringhaving an edge ring potential. The method further includes generating aplasma within the plasma processing chamber to process the substrate.The substrate is being processed while the edge ring RF voltage controlarrangement is configured to cause the edge ring potential to besubstantially equal to a DC potential of the substrate while processingthe substrate.

The above summary relates to only one of the many embodiments of theinvention disclosed herein and is not intended to limit the scope of theinvention, which is set forth in the claims herein. These and otherfeatures of the present invention will be described in more detail belowin the detailed description of the invention and in conjunction with thefollowing figures.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention is illustrated by way of example, and not by wayof limitation, in the figures of the accompanying drawings and in whichlike reference numerals refer to similar elements and in which:

FIG. 1 shows a simplified diagram of a substrate in which a set of edgepolymers have been deposited on the planar backside is shown.

FIG. 2 shows a simplified diagram of a capacitively-coupled plasmaprocessing system in which the DC potential of the edge ring issubstantially greater than that of the substrate.

FIG. 3 shows, in accordance with an embodiment of the present invention,a simplified schematic of a capacitively-coupled plasma processingsystem with independent low frequency (LF) RF voltage controlarrangement.

FIG. 4 shows, in accordance with an embodiment of the invention, amulti-frequency capacitively coupled plasma processing system with lowfrequency RF from RF generator.

FIG. 5 shows, in accordance with an embodiment of the invention, asimplified schematic of a segmented HER and arrangements for lowfrequency RF power delivery to each segment.

FIG. 6 shows, in accordance with an embodiment of the invention, asimplified schematic to conceptually show an integrated solution withadditional localized gas flow, temperature, and/or external DC powersource controls.

DETAILED DESCRIPTION OF EMBODIMENTS

The present invention will now be described in detail with reference toa few embodiments thereof as illustrated in the accompanying drawings.In the following description, numerous specific details are set forth inorder to provide a thorough understanding of the present invention. Itwill be apparent, however, to one skilled in the art, that the presentinvention may be practiced without some or all of these specificdetails. In other instances, well known process steps and/or structureshave not been described in detail in order to not unnecessarily obscurethe present invention.

Various embodiments are described hereinbelow, including methods andtechniques. It should be kept in mind that the invention might alsocover articles of manufacture that includes a computer readable mediumon which computer-readable instructions for carrying out embodiments ofthe inventive technique are stored. The computer readable medium mayinclude, for example, semiconductor, magnetic, opto-magnetic, optical,or other forms of computer readable medium for storing computer readablecode. Further, the invention may also cover apparatuses for practicingembodiments of the invention. Such apparatus may include circuits,dedicated and/or programmable, to carry out tasks pertaining toembodiments of the invention. Examples of such apparatus include ageneral-purpose computer and/or a dedicated computing device whenappropriately programmed and may include a combination of acomputer/computing device and dedicated/programmable circuits adaptedfor the various tasks pertaining to embodiments of the invention.

In accordance with embodiments of the invention, there are providedmethods and arrangements for configuring a plasma processing system toenhance control over plasma processing parameters. Embodiments of theinvention include delivering a low frequency RF power to an HER toproduce desired electric potential differences between a substrate andan edge ring. Thus, the equipotential lines of the plasma sheath for agiven plasma process may be optimized.

In one or more embodiments of the invention, an independent lowfrequency RF power source and an RF match network may be employed todeliver RF power to an HER through an RF filter. Embodiments of theinvention enable the independent control of an area of RF sheath voltageabove a substrate edge ring with respect to an area of RF sheath voltageabove a substrate to produce desired electric potential differences.

In another embodiment of the invention, low frequency RF power may bedelivered to an HER from an RF power source, which normally deliversmulti-frequency RF power to a substrate. In an example, a variablecapacitor may be employed to control the low frequency RF power deliveryto the HER. Embodiments of the invention enable control of an area of RFsheath voltage above a substrate edge ring with respect to an area of RFsheath voltage above a substrate to produce desired electric potentialdifference.

In one or more embodiments of the invention, an HER may be configured tohave a plurality of segments. Each segment of the HER may beelectrically isolated from the other segments by a plurality ofinsulators. Low frequency RF power may be individually controlled anddelivered to each HER segment and a common RF power source. The lowfrequency RF power from the common RF power source may be individuallycontrolled by a plurality of variable device. Embodiments of theinvention enable individually controlling the amount of RF power beingdelivered to each segment of the HER to improve azimuthal uniformity ofplasma species around the substrate edge.

In one or more embodiments of the invention, one or more additionalcontrols may be employed to provide an integrated solution for improvingthe uniformity of a substrate during plasma processing. In anembodiment, differential gas flow may be employed to compensate for thedifferential of plasma species and chemistry that may be caused byabrupt change from the substrate to an HER. In another embodimentelectrostatic clamping of the HER to a bottom electrode may be employedto individually control the temperature of the HER. In yet anotherembodiment, external DC control may be employed to control V_(DC) onHER.

The features and advantages of the invention may be better understoodwith reference to the figures and discussions that follow. FIG. 3 shows,in accordance with an embodiment of the present invention, a simplifiedschematic of a capacitively-coupled plasma processing system 300 withindependent low frequency (LF) RF voltage control arrangement.

Plasma processing system 300 may be a single, double, or triplefrequency RF capacitively discharge system. In an example, radiofrequencies may include, but are not limited to, e.g., 2 MHz, 27 MHz,and 60 MHz. Plasma processing system 300 may be configured to include asubstrate 306 being disposed above an electrostatic chuck (ESC) 308. ESC308, which also serves as a powered electrode, is disposed above a lowerelectrode 318.

Consider the situation wherein, for example, substrate 306 is beingprocessed. During plasma processing, a multifrequency RF generator 310with a path to ground (not shown to simplify the figure) may supply lowRF bias power to lower electrode 318 through an RF match network (notshown to simplify the figure). The RF power provided from RF generator310 may interact with a gas (not shown to simplify the figure) to igniteplasma 304 between upper electrode 302 and substrate 306. Plasma may beemployed to etch and/or deposit materials onto substrate 306 to createelectronic devices.

In the implementation of FIG. 3, certain etch applications may requireupper electrode 302 to be grounded with respect to a lower electrode,which is RF powered. The RF power is at least one of 2 MHz, 27 MHz, and60 MHz. Still other etch applications may require both the upperelectrode and the lower electrode to be RF powered using similar RFfrequencies.

As shown in FIG. 3, hot edge ring (HER) 312 generally performs manyfunctions, including positioning substrate 306 on ESC 308 and shieldingthe underlying components not protected by the substrate itself frombeing damaged by the ions of the plasma. Hot edge ring 312 may furthersit on a coupling ring 320 (e.g., quartz, etc.).

In the prior art, a configurable DC power source may be coupled to hotedge ring through an RF filter. Unlike prior art methods, an independentlow frequency RF power source 322 and an RF match network 316 may beemployed to deliver RF power to HER 312 through an RF filter 314 inaccordance with an embodiment of the invention. In an example, RF matchnetwork 316 may be employed to maximize RF power delivery to HER 312. Inan embodiment, low frequency RF power may be delivered to HER 312 via acoaxial cable 324 enclosed in an insulator sleeve 326. As shown in FIG.3, RF filter 314 is generally used to provide attenuation of unwanted RFpower without introducing losses to low frequency (about 20 KHz to about10 MHz) RF power source 322. Harmonics are generated in the plasmadischarge and may be kept from being returned to low frequency RF powersource 322 by RF filter 314.

To prevent RF coupling to substrate 306, the frequency of the lowfrequency RF power source being delivered to HER 312 may be different,in an embodiment, from the frequency being delivered to the biaselectrode, e.g. ESC 308. By decoupling from substrate 306, the lowfrequency RF power source being supplied to HER 312 goes mainly intoindependently controlling the induced V_(DC) on HER 312, and not thevoltage or ion energy to substrate 306.

In employing low frequency RF power source to control V_(DC) on HER 312,the power usage may be relatively low compared to high frequency RFpower source. Since high RF frequency may tend to couple to plasma, thepower usage for employing high frequency RF power to control voltage maybe higher to achieve the same V_(DC) control on HER 312. Analogously,prior art solutions employing configurable DC power source to controlvoltage on HER 312 may also require more power to achieve the sameV_(DC) control on HER 312. Advantageously, low frequency RF power allowsfor easier RF match resulting in coverage for the whole range of theprocess window.

In the implementation of FIG. 3, low frequency RF power source 332,which is being delivered to HER 312, may allow for independent controlof an area of RF sheath voltage above the substrate edge ring 330 withrespect to an area of RF sheath voltage above the substrate 332 toproduce desired electric potential differences in accordance with anembodiment. Hence, the chemistry and/or plasma around substrate 306 edgeare not affected.

While not wishing to be bound by theory, the inventor believes that theion angular distribution may be controlled by altering the DC potentialbetween the substrate and the edge ring, thus optimizing theequipotential lines of the plasma sheath for a given plasma process. Inan advantageous manner, changes may be made to the electric field aroundthe substrate edge by changing an RF coupling of an edge ring. In anembodiment, the chuck is substantially electrically isolated from theedge ring.

For example, if the DC potential of the substrate edge is substantiallythe same as the DC potential of the edge ring (e.g.,V_(substrate)−V_(edge ring)≈0), the ion angular distribution isgenerally uniform. Consequently, in an area of the plasma sheath aboveboth the substrate and the edge ring, a set of ion vectors are formedthat are substantially perpendicular to the substrate.

However, if the DC potential of the substrate edge is substantiallydifferent from the DC potential of the edge ring, the ion angulardistribution is generally non-uniform. Consequently, in the area of theplasma sheath above both the substrate and the edge ring, a set of ionvectors are formed that tend to be non-uniform with respect to thesurfaces of the substrate and the edge ring.

In an advantageous fashion, the DC potential on the edge ring may beindependently controlled from that of the substrate. Consequently, thedifference between the DC potential of the substrate to the DC potentialof the edge ring may be optimized in order to control the angulardistribution of the positively charged ions in the plasma around theedge of the substrate.

In addition to the aforementioned method and arrangement as discussed inFIG. 3, other embodiments may be provided in which low frequencywafer/substrate RF power may be employed to deliver RF power to HER tocontrol RF shealth voltage. FIG. 4 shows, in accordance with anembodiment of the invention, a multi-frequency capacitively coupledplasma processing system 400 with low frequency RF from RF generator410. Plasma processing system 400 may be configured to include agrounded upper electrode 402, a substrate 406, an electrostatic chuck(ESC) 408, a lower electrode 418, a hot edge ring (HER) 412, a coaxialcable 424, and an insulator sleeve 426.

Consider the situation wherein, for example, substrate 406 is beingprocessed. Plasma 404 may be struck when gas (not shown to simply thefigure) interacts with RF power from RF power generator 410. Plasma 404may be employed to etch and/or deposit materials onto substrate 406 tocreate electronic devices.

As aforementioned, substrate edge effects, such as electric field,plasma temperature, and the loading effects from process chemistry, maycause the process results near the substrate edge to be differed fromthe remaining (center) area of the substrate. For example, theequipotential lines of the plasma sheath may become disrupted, causingnon-uniform ion angular distribution around the substrate edge.

In an embodiment, RF power source 410, which generally delivers RF powerto substrate 406, may be employed to deliver low frequency RF power toHER 412 through a high frequency RF filter 414 and a variable capacitor416. In an example, variable capacitor 416 may be employed to controllow frequency RF power delivery to HER 412 in accordance with anembodiment of the invention. Due to the low frequency, RF power from RFgenerator 410 may be delivered to HER 412 via coaxial cable 424 enclosedin insulator sleeve 426 in an embodiment.

In the implementation of FIG. 4, low frequency RF power source 410,which is being coupled to HER 412, may allow for limited control of anarea of RF sheath voltage above the substrate edge ring 430 with respectto an area of RF sheath voltage above the substrate 432 to producedesired electric potential difference in accordance with an embodimentof the invention. The limited control may be due to RF power to bothsubstrate 406 and/or HER 412 being from the same RF generator 410.

Although HER 412 voltage may be controlled by controlling the ratio ofRF power to substrate 406 and HER 412, the RF power to substrate 406 maydrop if more RF power is shifted to HER 412. Notwithstanding the lack ofindependent control of RF power to substrates 406 and/or HER 412, thetrade-off in not employing an independent RF power source may be offsetby providing device manufacturer(s) the ability to control induced DCvoltage on HER 412 through low frequency RF power from multi-frequencyRF power source 410 to improve etching rate uniformity.

While not wishing to be bound by theory, the inventor believes that theion bombardment to substrate may be controlled by altering the sheaththickness. Consider the situation wherein, for example, low frequency RFpower may be supplied to the HER resulting in increasing the sheaththickness and impedance. The voltage drop is a combination of thevoltage drop across the sheath and the voltage drop across the surfaceon top of the substrate. Due to the higher voltage drop across a thickersheath, i.e., higher impedance, ion bombardments to the substrate may beless. In an embodiment, the sheath thickness may be controlled byadjusting the voltage on the HER through low frequency RF power toaffect ion bombardment on the substrate.

Another indirect effect from applying low frequency RF power to the HERis the DC-like effect similar to applying DC to the upper electrode. Forexample, the power of low RF may be increased to cause the inducedV_(DC) on the HER to increase. As a result, there is a higher voltagedrop on the upper electrode causing secondary electrons to be ejectedinto the plasma increasing the plasma density. Hence, the plasma densitymay be controlled by the voltage on the HER through low frequency RFpower.

In general, low frequency RF power is easier to deliver and control thanhigh frequency RF power. In the implementation of FIGS. 3 and 4, lowfrequency RF power may be delivered to the HER by inexpensive coaxialcable in an embodiment. In prior art, when high frequency RF power isbeing supply to a localized spot on the HER, the azimuthal uniformity ofplasma species around the wafer edge may be low due to the localizedeffect from the high frequency RF power on the HER. In high frequency RFpower, the energy from high frequency RF power may couple to the plasmaspecies. In contrast, the azimuthal uniformity around the wafer edge ishigh since low frequency RF power may not create localized effect on theHER. The low frequency RF power affects the voltage at the HER withoutcoupling to the plasma species. As the term is employed herein,azimuthal refers to the horizontal component of direction, e.g., compassdirection, as being measured around the horizon.

When low frequency RF power delivery to the HER, the azimuthaluniformity may be high. The azimuthal uniformity of plasma speciesaround the wafer edge may be improved by segmenting the low frequency RFpower delivery to the HER. FIG. 5 shows, in accordance with anembodiment of the invention, a simplified schematic of a segmented HERand arrangements for low frequency RF power delivery to each segment.

In the implementation of FIG. 5, an HER may be divided into a pluralityof segments (506A, 506B, 506C and 506D) in an embodiment. Each HERsegment may be electrically isolated from the other by a plurality ofinsulators (508A, 508B, 508C, and 508D) in accordance with an embodimentof the invention. In an embodiment, low frequency RF power may beindividually controlled and delivered to each HER segment. In anembodiment, for example, the low frequency RF power may be deliveredfrom a common RF power source 502. The low frequency RF power from thecommon RF power source 502 may be individually controlled by a pluralityof variable devices (504A, 504B, 504C, and 504D) to each HER segment inaccordance with an embodiment of the invention. These variable devicesmay be implemented by variable matches, for example. The variabledevices may be employed to provide independent control of the deliveryof the low frequency RF power to an HER segment.

Consider the situation wherein, for example, during plasma processing,there may be azimuthal non-uniformity on the HER at segment 506C. Thelow frequency RF power may be adjusted locally by adjusting variabledevice 504B to control the amount of RF power being delivered to HERsegment 506C from common RF power source 502. Thus, azimuthal uniformityof plasma species around the wafer edge may be improved by individuallycontrolling the amount of RF power being delivered to each segment of ahot edge ring. In contrast to prior art where localized effect of RFpower delivery on an HER may cause azimuthal non-uniformity, controlleddelivery of RF power to a segment of an HER may provide for betterazimuthal uniformity around the wafer edge.

Once voltage control to HER is achieved by low frequency RF power, oneor more additional controls may be introduced to provide an integratedsolution for improved uniformity of substrate during plasma processingin accordance with one or more embodiments of the invention. FIG. 6shows, in accordance with an embodiment of the invention, a simplifiedschematic to conceptually show an integrated solution with additionallocalized gas flow, temperature, and/or external DC power sourcecontrols.

Consider the situation wherein, for example, low frequency RF power maybe delivered to an HER 612 during plasma processing to correct sheathvoltage and/or ions trajectory issues. The chemistry around the waferedge may be affected due to the sputtering of the HER materials. Theby-products from the sputtered HER materials may interact and interferewith the local etching chemistry at the wafer edge adjacent to the HER.

In the example of FIG. 6, differential gas flow may be introducedthrough a plurality of nozzles (602A, 602B, 602C, and 602D) across theregion that may include a substrate 606 and an HER 612 to providedifferent etch gas densities in an embodiment. Therefore, differentplasma species may exist in different regions across substrate 606 andHER 612 to compensate for the differential of the plasma species and thechemistry caused by abrupt change from substrate 606 to HER 612.

Conceptually, to get differential gas flow across substrate 606 and/orHER 612, the first gas flow rate from first nozzle 602A may be differentfrom second flow rate from second nozzle 602B, and the like inaccordance with an embodiment. The gas flow rate through each nozzle maybe actively manipulated using appropriate flow control strategy and flowcontrol mechanism (e.g., mass flow controller). Hence, plasma densitymay be controlled individually to offset the chemistry effect cause byunwanted sputtering of HER materials from RF voltage control of HER 612.

In general, the temperature of wafer edge of substrate 606 and/or HER612, e.g., T_(substrate) and/or T_(edge ring), may increase duringplasma processing. Uncontrolled increases in temperature at HER 612 mayadversely affect wafer edge results. For example, as HER 612 getshotter, the chemistry and reactivity of plasma species of the wafer edgein the local vicinity of HER 612 may change. The inventors hereinrealize the temperature of substrate 606 and/or HER 612 need to beindividually controlled to maintain process uniformity during plasmaprocessing.

In an embodiment, the temperature of substrate 606 may be controlled byelectrostatically clamping substrate 606 to chuck (ESC) 608.Analogously, the temperature of HER 612 may be individually controlledby also employing electrostatic clamping of HER 612 to bottom electrode618 in an embodiment. By clamping the heat transfer mechanism, thetemperature of HER 612 transfers heat from bottom electrode 618 onto HER612. Thus, by employing electrostatic forces to clamp substrate 606 orHER 612, T_(substrate) and/or T_(edge ring) may be individuallycontrolled to allow etching to occur at an appropriate rate.

Consider the situation wherein, for example, DC voltage may bemanipulated by an external DC power supply 616 through an RF filter 614while applying low frequency RF power to HER 612. In an example, the DCmay be grounded while applying low frequency RF power to HER 612. Inanother example, the DC voltage, i.e. positive or negative V_(CD), maybe applied while applying low frequency RF power to HER 612.

When low frequency RF power is being applied to HER 612 during plasmaprocessing, a V_(DC) may be induced on HER 612 to push plasma potentialhigher. In order to force VDC on HER 612 to remain at zero, plasmapotential may tend to shift affecting the ion energy on substrate 606.By having external DC control on HER 612 while applying low frequency RFpower to HER 612, the ion energy on substrate 606 may be controlledindependently.

In general, device fabrication tends to be a multi-steps process. Eachstep in a process recipe for plasma processing of a substrate may haveunique process parameters. For example, the process recipe for anetching step may specify a low frequency RF power to be directed to anHER to control plasma sheath to get better uniformity at a substrateedge in an embodiment. However, if the low frequency RF power is notbeing applied to the HER during plasma processing, ions tend to bombardthe backside of a substrate edge, i.e. beveled edge, due to the voltagepotential difference between the HER and the substrate. As ions bombardthe beveled edge, polymer deposits on the beveled edge may be removedthrough the ion bombardments. Hence, an in-situ process step forcleaning the beveled edge of the substrate may be achieved. For example,the process recipe for an in-situ cleaning step may specify that the lowfrequency RF power to be turned off to allow the ions to bombard thebeveled edge in an embodiment.

As may be appreciated from the foregoing, embodiments of the inventionprovide methods and arrangements for control of wafer edge results bycontrolling sheath voltages on HER around the wafer edge. By employingan integrated solution of tuning gas and/or electrostatic clamping forthermal control with low RF HER voltage control (these approaches may beemployed singularly or in any combination and/or sequence), the plasmaprocessing of wafer edge results may be controlled locally to achievehigher yield of devices being fabricated By employing external DCcontrol with low RF HER voltage control, the ion energy on the substratemay be controlled independently. By controlling HER voltage in differentsteps of a process recipe, an in-situ cleaning of polymer deposition ispossible on the beveled edges. In addition, several indirect resultsthat indicate ion energy and plasma density may be controlled duringplasma processing.

While this invention has been described in terms of several preferredembodiments, there are alterations, permutations, and equivalents, whichfall within the scope of this invention. Also, the title, summary, andabstract are provided herein for convenience and should not be used toconstrue the scope of the claims herein. It should also be noted thatthere are many alternative ways of implementing the methods andapparatuses of the present invention. Although various examples areprovided herein, it is intended that these examples be illustrative andnot limiting with respect to the invention. Further, in thisapplication, a set of “n” items refers zero or more items in the set. Itis therefore intended that the following appended claims be interpretedas including all such alterations, permutations, and equivalents as fallwithin the true spirit and scope of the present invention.

1. In a plasma processing chamber, a method for processing a substrate,said substrate being disposed above a chuck and surrounded by an edgering, said edge ring being electrically isolated from said chuck,comprising: providing first RF power to said chuck; providing an edgering RF voltage control arrangement, said edge ring RF voltage controlarrangement being coupled to said edge ring to provide second RF powerto said edge ring, said second RF power being delivered to said edgering has a frequency of about 20 KHz to about 10 MHz, resulting in saidedge ring having an edge ring potential; and generating a plasma withinsaid plasma processing chamber to process said substrate, said substratebeing processed while said edge ring RF voltage control arrangement isconfigured to cause said edge ring potential to be substantially equalto a DC potential of said substrate while processing said substrate. 2.The method of claim 1, wherein said edge ring RF voltage controlarrangement includes an RF filter arrangement and an RF matcharrangement, said RF filter arrangement being disposed between said edgering and an RF power source.
 3. The method of claim 1, wherein said RFpower source is an RF generator that is different from an RF generatoremployed to provide said first RF power to said chuck.
 4. The method ofclaim 1, wherein said RF power source is an RF generator that is alsoemployed to provide said first RF power to said chuck.
 5. The method ofclaim 2, wherein said RF filter arrangement is configured to attenuateunwanted harmonic RF energy from reaching said RF power source.
 6. Themethod of claim 2, wherein said RF match arrangement is configured tomaximize RF power delivery to said edge ring.
 7. The method of claim 1,wherein the frequency of said second RF power being delivered to saidedge ring is different from the frequency of said first RF power.
 8. Themethod of claim 7, wherein said first RF power being delivered to saidchuck has a frequency of about 2 MHz.
 9. The method of claim 7, whereinsaid first RF power being delivered to said chuck has a frequency ofabout 27 MHz.
 10. The method of claim 7, wherein said first RF powerbeing delivered to said chuck has a frequency of about 60 MHz.
 11. Themethod of claim 1, wherein said edge ring is electrically decoupled fromsaid substrate.
 12. The method of claim 1, wherein said edge ring is amonolithic unit.
 13. The method of claim 1, wherein said edge ring isconfigured to include a plurality of segments.
 14. The method of claim13, wherein a segment, of said plurality of segments of said edge ringis configured to be electrically isolated from adjacent segments of saidplurality of segments of said edge ring.
 15. The method of 14, whereinat least two segments of said plurality of segments of said edge ringare configured to have independent control of said second RF powerdelivered to each of said at least two segments of said plurality ofsegments.
 16. The method of claim 1 further comprising: generatingdifferential gas flow across a region, said region includes saidsubstrate and said edge ring, said differential gas flow is provided bya plurality of nozzles; providing electrostatic clamping means to saidedge ring to independently control temperature of said edge ring; andproviding external DC voltage control arrangement to provide DC power tosaid edge ring.
 17. A plasma processing system having a plasmaprocessing chamber configured for processing a substrate, said substratebeing disposed above a chuck and surrounded by an edge ring, said edgering being electrically isolated from said chuck, comprising: a first RFpower is provided to said chuck; and an edge ring RF voltage controlarrangement, said edge ring RF voltage control arrangement being coupledto said edge ring to provide second RF power to said edge ring, saidsecond RF power being delivered to said edge ring has a frequency ofabout 20 KHz to about 10 MHz, resulting in said edge ring having an edgering potential, said plasma processing chamber is configured to strikeplasma to process said substrate, said substrate being processed whilesaid edge ring RF voltage control arrangement is configured to causesaid edge ring potential to be substantially equal to a DC potential ofsaid substrate while processing said substrate.
 18. The plasmaprocessing system of claim 17, wherein said edge ring RF voltage controlarrangement includes an RF filter arrangement and an RF matcharrangement, said RF filter arrangement being disposed between said edgering and an RF power source.
 19. The plasma processing system of claim17, wherein said RF power source is an RF generator that is differentfrom an RF generator employed to provide said first RF power to saidchuck.
 20. The plasma processing system of claim 17, wherein said RFpower source is an RF generator that is also employed to provide saidfirst RF power to said chuck.
 21. The plasma processing system of claim17, wherein the frequency of said second RF power being delivered tosaid edge ring is different from the frequency of said first RF power.22. The plasma processing system of claim 21, wherein said first RFpower being delivered to said chuck has a set of RF frequencies thatincludes at least one of about 2 MHz, about 27 MHz, and about 60 MHz.23. The plasma processing system of claim 17, wherein said edge ring iselectrically decoupled from said substrate.
 24. The plasma processingsystem of claim 17, wherein said edge ring is a monolithic unit.
 25. Theplasma processing system of claim 17, wherein said edge ring isconfigured to include a plurality of segments.
 26. The plasma processingsystem of claim 25, wherein a segment of said plurality of segments ofsaid edge ring is configured to be electrically isolated from adjacentsegments of said plurality of segments of said edge ring.
 27. The plasmaprocessing system of 26, wherein at least two segments of said pluralityof segments of said edge ring are configured to have independent controlof said second RF power delivered to each of said at least two segmentsof said plurality of segments.
 28. The plasma processing system of claim17 further comprising: differential gas flow is configured to flowacross a region, said region includes said substrate and said edge ring,said differential gas flow is provided by a plurality of nozzles;electrostatic clamping means is configured to provide said edge ringindependent temperature control of said edge ring; and external DCvoltage control arrangement is configured to provide DC power to saidedge ring.